Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Intersil Corporation |
FSTJ9055D
|
72Kb / 8P |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
June 2000 |
FSYE913A0D
|
73Kb / 9P |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
February 2000 |
FSYE923A0D
|
70Kb / 8P |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
June 2000 |
FSYC9160D
|
61Kb / 8P |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
July 1998 |
FSYA9150D
|
56Kb / 8P |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
October 1998 |
FSYC9055D
|
51Kb / 8P |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
July 1999 |
FSJ163D
|
56Kb / 8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 1999 |
FSYC055D
|
49Kb / 8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
FSYE430D
|
58Kb / 8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 1999 |
FSYA450D
|
56Kb / 8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
March 1999 |