DESCRIPTION
The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.

FEATURES
• Super Low Noise Figure & High Associated Gain
    NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 200 µm