DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.
The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.
The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap.