DESCRIPTION AND APPLICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 3000 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other high-performance power amplifiers.

● FEATURES
   ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz
   ♦ 7 dB Power Gain at 18 GHz
   ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V
   ♦ 45% Power-Added Efficiency