These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
   (0.5 V Max @ 3.0 A, TJ = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard-Ring for Stress Protection
• Device Passes ISO 7637 Pulse #1
• SBRS8 and NRVB Prefix for Automotive and Other Applications
   Requiring Unique Site and Control Change Requirements;
   AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant