600V - 22A - IGBT Application: Inverter

Features

  High breakdown-voltage

  Low collector to emitter saturation voltage

           VCE(sat)= 1.5 V typ. (at IC= 22 A, VGE= 15 V, Ta = 25°C)

  Short circuit withstand time (6 s typ.)

  Trench gate and thin wafer technology (G6H series)