FEATURES
1. Low on-resistance (typ. 26Ω) for normally-closed type
   This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method.
2. Controls low-level analog signals
   PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion.
3. High sensitivity and low on resistance
   Can control max. 0.15 A load current with 5 mA input current.
4. Low-level off state leakage current of max. 1 µA

TYPICAL APPLICATIONS
• Security equipment
• Telephone equipment (Dial pulse)
• Measuring instruments