| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Stanson Technology |
ST2318SRG
|
221Kb / 7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST3400SRG
|
547Kb / 6P |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST3406SRG
|
325Kb / 6P |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN1810
|
966Kb / 7P |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4346
|
352Kb / 7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4392
|
383Kb / 7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4416
|
966Kb / 6P |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4426
|
362Kb / 6P |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STP4407
|
545Kb / 6P |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
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