Features and Benefits
NPN Transistor
   • BVCEO > 20V
   • IC = 4.5A Continuous Collector Current
   • Low Saturation Voltage (150mV max @ 1A)
   • RSAT = 47mΩ for a low equivalent On-Resistance
   • hFE characterized up to 6A for high current gain hold up
Schottky Diode
   • BVR > 40V
   • IFAV = 3A Average Peak Forward Current
   • Low VF < 500mV (@1A) for reduced power loss
   • Fast switching due to Schottky barrier

   Low profile 0.8mm high package for thin applications
   RθJA efficient, 40% lower than SOT26
   6mm2 footprint, 50% smaller than TSOP6 and SOT26
   Lead-Free, RoHS Compliant (Note 1)
   Halogen and Antimony Free. “Green” Device (Note 2)
   Qualified to AEC-Q101 Standards for High Reliability

Applications
• DC – DC Converters
• Charging circuits
• Mobile phones
• Motor control
• Portable applications