DESCRIPTION
The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V, it delivers 29dB power gain between 2.4-2.5GHz, at a low quiescent current of 80mA.

KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4-2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Quiescent Current ~80mA
◾ Power Gain ~ 29 dB
◾ Pout=~+18dBm for 2.5% EVM, OFDM 64QAM/54Mbps
◾ Total Current ~130mA for Pout= +18dBm
◾ 50Ω Input/Output Matching
◾ On-chip Output Power Detector
◾ Small Footprint: 2x2mm2
◾ Ultra Low Profile:0.46mm

APPLICATIONS
◾ IEEE 802.11b/g/n