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GT60M303 Datasheet (PDF) - Toshiba Semiconductor
GT60M303 Datasheet PDF - Toshiba Semiconductor
No. de pieza GT60M303
Descarga  GT60M303 Descarga
Tamaño del archivo   426.72 Kbytes
Page   6 Pages
Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Descripción Electrónicos INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT60M303 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
GT60M303 Datasheet PDF - Toshiba Semiconductor

No. de pieza GT60M303
Descarga  GT60M303 Click to download

Tamaño del archivo   426.72 Kbytes
Page   6 Pages
Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Descripción Electrónicos INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT60M303 Datasheet (HTML) - Toshiba Semiconductor


GT60M303 Detalles de producto

HIGH POWER SWITCHING APPLICATIONS

● Fourth generation IGBT
● FRD included between emitter and collector
● Enhancement mode type
● High speed 
   IGBT : tf = 0.25μs (TYP.)
   FRD : trr = 0.7μs (TYP.)
● Low saturation voltage : VCE (sat) = 2.1V (TYP.)




Número de pieza similar - GT60M303

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Descripción similar - GT60M303

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