| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 NEC |
2SC5289
|
114Kb / 12P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
|
|
LD7126
|
80Kb / 6P |
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
|
 DAICO Industries, Inc. |
CAMH9126
|
69Kb / 1P |
L-Band Power Amplifier
|
|
CAMH9223
|
228Kb / 1P |
L-Band Pre-Amplifier
|
 OKI electronic componet... |
KGF2512
|
75Kb / 6P |
Midium Power Amplifier for L-band
|
 Communications & Power ... |
SFD233G
|
358Kb / 1P |
Crossed-Field Amplifier
|
|
SFD251H
|
353Kb / 1P |
Crossed-Field Amplifier
|
|
VXS1925
|
309Kb / 1P |
Crossed-Field Amplifier
|
 Renesas Technology Corp |
2SC5288
|
344Kb / 14P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
October 2001 |
|
2SC5289
|
342Kb / 14P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
October 2001 |