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MX25L3205AMC-20 Datasheet (PDF) - Macronix International

MX25L3205AMC-20 Datasheet PDF - Macronix International
No. de pieza MX25L3205AMC-20
Descarga  MX25L3205AMC-20 Descarga
Tamaño del archivo   954.41 Kbytes
Page   46 Pages
Fabricante Electrónico  MCNIX [Macronix International]
Página de inicio  http://www.macronix.com
Logo MCNIX - Macronix International
Descripción Electrónicos 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY

MX25L3205AMC-20 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
MX25L3205AMC-20 Datasheet PDF - Macronix International

No. de pieza MX25L3205AMC-20
Descarga  MX25L3205AMC-20 Click to download

Tamaño del archivo   954.41 Kbytes
Page   46 Pages
Fabricante Electrónico  MCNIX [Macronix International]
Página de inicio  http://www.macronix.com
Logo MCNIX - Macronix International
Descripción Electrónicos 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY

MX25L3205AMC-20 Datasheet (HTML) - Macronix International


MX25L3205AMC-20 Detalles de producto

GENERAL DESCRIPTION

The MX25L3205A is a CMOS 33,554,432 bit serial eLiteFlashTM Memory, which is configured as 4,194,304 x 8 internally. The MX25L3205A features a serial peripheral interface and software protocol allowing operation on a simple 3- wire bus. The three bus signals are a clock input

(SCLK), a serial data input (SI), and a serial data output (SO). SPI access to the device is enabled by CS# input.



GENERAL

• Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3

• 33,554,432 x 1 bit structure

• 64 Equal Sectors with 64K byte each

  - Any sector can be erased

• Single Power Supply Operation

  - 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

• Low Vcc write inhibit is from 1.5V to 2.5V



PERFORMANCE

• High Performance

  - Fast access time: 50MHz serial clock (30pF + 1TTL Load)

  - Fast program time: 3ms/page (typical, 256-byte per page)

  - Fast erase time: 1s/sector (typical, 64K-byte per sector) and 64s/chip (typical)

  - Acceleration mode:

  - Program time: 2.4ms/page (typical)

 - Erase time: 0.8s/sector (typical) and 51s/chip (typical)

• Low Power Consumption

  - Low active read current: 30mA (max.) at 50MHz

  - Low active programming current: 30mA (max.)

  - Low active erase current: 38mA (max.)

  - Low standby current: 50uA (max.)

  - Deep power-down mode 1uA (typical)

• Minimum 10K erase/program cycle for array

• Minimum 100K erase/program cycle for additional 4Kb

 




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