Description
The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.
In contrast to the TSHA550. series lead stand–offs are omitted.

Features
● Extra high radiant power
● Suitable for high pulse current operation
● Standard T–1 (ø 5 mm) package
● Leads formed without stand–off
● Angle of half intensity ϕ = ± 24°
● Peak wavelength λp = 875 nm
● High reliability
● Good spectral matching to Si photodetectors

Applications
    Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
    Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.