General description
NGFP15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring
third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures.
NGFP15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short
circuit withstand time of 5 μs. This hard-switching 650 V, 15 A IGBT is optimized for high-voltage,
high-frequency industrial power inverter applications and servo motor drive applications.
Features
• Device current is rated at 15 A
• Low conduction and switching losses
• Stable and tight parameters for easy parallel operation
• Maximum junction temperature 175 °C
• Fully rated and fast reverse recovery diode
• 5 μs short circuit withstand time
Applications
• Motor drives for industrial and consumer appliances
• Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating
grippers, in-line manufacturing, etc.
• Power converter applications, such as uninterruptible power supply (UPS)
• Induction heating
• Welding