Wide Range of Supply Voltages Over
Specified Temperature Range:
TA = –40°C to 85°C . . . 2 V to 8 V
Fully Characterized at 3 V and 5 V
Single-Supply Operation
Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
VDD –1 V at 25°C
Output Voltage Range Includes Negative
Rail
High Input Impedance . . . 1012 W Typ
Low Noise . . . 25 nV//Hz Typically at
f = 1 kHz (High-Bias Mode)
ESD-Protection Circuitry
Designed-In Latch-Up Immunity
Bias-Select Feature Enables Maximum
Supply Current Range From 17 mA to
1.5 mA at 25°C

description
The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications
and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments
silicon-gate LinCMOSE technology to facilitate low-power, low-voltage operation and excellent offset-voltage
stability. LinCMOSE technology also enables extremely high input impedance and low bias currents allowing
direct interface to high-impedance sources.
The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of
different supply currents and therefore different levels of ac performance. The supply current can be set at
17 mA, 250 mA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/ms (at 3 V).
The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully
specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined
with low power consumption makes this device a good choice for remote, inaccessible, or portable
battery-powered applications. The common-mode input range includes the negative rail.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.