| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Toshiba Semiconductor |
SSM3J01F
|
614Kb / 5P |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications
|
|
SSM3J108TU
|
143Kb / 5P |
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
|
|
SSM3J110TU
|
143Kb / 5P |
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
|
|
SSM3J111TU
|
476Kb / 5P |
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
|
|
SSM3J112TU
|
131Kb / 6P |
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
|
|
SSM3J113TU
|
128Kb / 6P |
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
|
|
SSM3J117TU
|
132Kb / 5P |
Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
|
|
SSM3J118TU
|
131Kb / 5P |
Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
|
|
SSM3J305T
|
168Kb / 6P |
Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
|
|
2SJ238
|
350Kb / 5P |
Field Effect Transistor Silicon P Channel MOS Type (L2--MOS IV) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
|