STCV201K0CY4V Datasheet(PDF) - Innogration Technologies, Inc.

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STCV201K0CY4V Datasheet (PDF) - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet PDF - Innogration Technologies, Inc.


No. de pieza	STCV201K0CY4V

Descarga	STCV201K0CY4V Descarga

Tamaño del archivo	1287.1 Kbytes

Page	5 Pages

Fabricante Electrónico	INNOGRATION [Innogration Technologies, Inc.]

Página de inicio	http://www.innogration.net/index.htm

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Descripción Electrónicos

Gallium Nitride 50V, 1000W, 1.9-2.0GHz RF Power Transistor

STCV201K0CY4V Datasheet (PDF)

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STCV201K0CY4V Datasheet PDF - Innogration Technologies, Inc.


No. de pieza	STCV201K0CY4V

Descarga	STCV201K0CY4V Click to download

Tamaño del archivo	1287.1 Kbytes

Page	5 Pages

Fabricante Electrónico	INNOGRATION [Innogration Technologies, Inc.]

Página de inicio	http://www.innogration.net/index.htm

Logo

Descripción Electrónicos	Gallium Nitride 50V, 1000W, 1.9-2.0GHz RF Power Transistor

STCV201K0CY4V Datasheet (HTML) - Innogration Technologies, Inc.

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STCV201K0CY4V Detalles de producto

Description
The STCV201K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 1.9-2.0GHz, enabled by wide band VBW capability to
support IBW up to 100MHz..
It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 120 to 140W
average power, according to normal 9dB back off.
There is no guarantee of performance when this part is used in applications designed
Outside of these frequencies.

Applications
 Asymmetrical Doherty amplifier within N2 5G band and B2 4G band
 L band power amplifier

Número de pieza similar - STCV201K0CY4V

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Innogration Technologie...	STCV20700BY4V	1Mb / 8P	Gallium Nitride 50V, 700W,1.8-2.0GHz RF Power Transistor

Descripción similar - STCV201K0CY4V

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