STCV181K0CY4V Datasheet(PDF) - Innogration Technologies, Inc.

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STCV181K0CY4V Datasheet (PDF) - Innogration Technologies, Inc.

STCV181K0CY4V Datasheet PDF - Innogration Technologies, Inc.


No. de pieza	STCV181K0CY4V

Descarga	STCV181K0CY4V Descarga

Tamaño del archivo	1396.17 Kbytes

Page	5 Pages

Fabricante Electrónico	INNOGRATION [Innogration Technologies, Inc.]

Página de inicio	http://www.innogration.net/index.htm

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Descripción Electrónicos

Gallium Nitride 50V, 1000W, 1.8-1.9GHz RF Power Transistor

STCV181K0CY4V Datasheet (PDF)

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STCV181K0CY4V Datasheet PDF - Innogration Technologies, Inc.


No. de pieza	STCV181K0CY4V

Descarga	STCV181K0CY4V Click to download

Tamaño del archivo	1396.17 Kbytes

Page	5 Pages

Fabricante Electrónico	INNOGRATION [Innogration Technologies, Inc.]

Página de inicio	http://www.innogration.net/index.htm

Logo

Descripción Electrónicos	Gallium Nitride 50V, 1000W, 1.8-1.9GHz RF Power Transistor

STCV181K0CY4V Datasheet (HTML) - Innogration Technologies, Inc.

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STCV181K0CY4V Detalles de producto

Description
The STCV181K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 1.8-1.9GHz, enabled by wide band VBW capability to
support IBW up to 100MHz..
It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 120 to 140W
average power, according to normal 9dB back off.
There is no guarantee of performance when this part is used in applications designed
Outside of these frequencies.

Applications
 Asymmetrical Doherty amplifier within N3 5G band and B3 4G band
 L band power amplifier

Número de pieza similar - STCV181K0CY4V

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Innogration Technologie...	STCV10600RBY4	1Mb / 6P	Gallium Nitride 50V, 600W,0.6-1GHz RF Power Transistor
	STCV10700BY4	1Mb / 6P	Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor
	STCV10800RBY4	1Mb / 6P	Gallium Nitride 50V, 800W,0.6-1GHz RF Power Transistor

Descripción similar - STCV181K0CY4V

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
M/A-COM Technology Solu...	NPT1004	541Kb / 6P	Gallium Nitride 28V, 45W RF Power Transistor
	NPT1007	1,018Kb / 7P	Gallium Nitride 28V, 200W RF Power Transistor
	NPT1012	1,019Kb / 8P	Gallium Nitride 28V, 25W RF Power Transistor
	NPT25015	624Kb / 8P	Gallium Nitride 28V, 23W RF Power Transistor
	NPT25100	1Mb / 13P	Gallium Nitride 28V, 125W RF Power Transistor
	NPT35050A	673Kb / 10P	Gallium Nitride 28V, 65W RF Power Transistor
	NPTB00004	953Kb / 10P	Gallium Nitride 28V, 5W RF Power Transistor
List of Unclassifed Man...	NPT1010	1Mb / 10P	Gallium Nitride 28V, 100W RF Power Transistor
	NPT35015	716Kb / 10P	Gallium Nitride 28V, 18W RF Power Transistor
	NPT35050A	673Kb / 10P	Gallium Nitride 28V, 65W RF Power Transistor

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