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STBV35150C6 Datasheet (PDF) - Innogration Technologies, Inc.
STBV35150C6 Datasheet PDF - Innogration Technologies, Inc.
No. de pieza STBV35150C6
Descarga  STBV35150C6 Descarga
Tamaño del archivo   1497.83 Kbytes
Page   9 Pages
Fabricante Electrónico  INNOGRATION [Innogration Technologies, Inc.]
Página de inicio  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descripción Electrónicos Gallium Nitride 50V, 150W, 0.1-3.5GHz RF Power Transistor

STBV35150C6 Datasheet (PDF)

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STBV35150C6 Datasheet PDF - Innogration Technologies, Inc.

No. de pieza STBV35150C6
Descarga  STBV35150C6 Click to download

Tamaño del archivo   1497.83 Kbytes
Page   9 Pages
Fabricante Electrónico  INNOGRATION [Innogration Technologies, Inc.]
Página de inicio  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descripción Electrónicos Gallium Nitride 50V, 150W, 0.1-3.5GHz RF Power Transistor

STBV35150C6 Datasheet (HTML) - Innogration Technologies, Inc.


STBV35150C6 Detalles de producto

Description
The STBV35150C6 is a 150watt, GaN HEMT, ideal for general applications from 0.1 to 3.5GHz.
It features high gain, wide band and low cost, in 10*6mm plastic open cavity package, enabling
surface mounted on PCB through grounding vias or soldered on heatsink directly.
It is a highly cost effective option for pulsed power amplifier within L/S band.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 5G, 4G wireless infrastructure
 Wideband or narrowband power amplifier
 S band pulsed power amplifier
 L band pulsed power amplifier




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