1 Features
• Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ
(LMG3100R044) GaN FET and driver
• 100V continuous, 120V pulsed voltage rating
• Interated high-side level shift and bootstrap
• Two LMG3100 can form a half-bridge
– No external level shifter needed
• 5V external bias power supply
• Supports 3.3V and 5V input logic levels
• High slew rate switching with low ringing
• Gate driver capable of up to 10MHz switching
• Internal bootstrap supply voltage clamping to
prevent GaN FET overdrive
• Supply rail undervoltage lockout protection
• Low power consumption
• Package optimized for easy PCB layout
• Exposed top QFN package for top-side cooling
• Large exposed pads at bottom for bottom-side
cooling

2 Applications
• Buck, boost, and buck-boost converters
• LLC converters
• Solar inverters
• Telecom and server power
• Motor drives
• Power tools
• Class-D audio amplifiers

3 Description
The LMG3100 device is a 100V continuous, 120V
pulsed Gallium Nitride (GaN) FET with integrated
driver. Device is offered in two Rds(on) and max
current variants, 126A/1.7mΩ for LMG3100R017 and
46A/4.4mΩ for LMG3100R044. The device consists
of a 100V GaN FET driven by a high-frequency
GaN FET driver. The LMG3100 incorporates a high
side level shifter and bootstrap circuit, so that two
LMG3100 devices can be used to form a half bridge
without an additional level shifter.
GaN FETs provide significant advantages for power
conversion as they have zero reverse recovery
and very small input capacitance CISS and output
capacitance COSS. The driver and the GaN FET are
mounted on a completely bond-wire free package
platform with minimized package parasitic elements.
The LMG3100 device is available in a 6.5mm ×
4mm × 0.89mm lead-free package and can be easily
mounted on PCBs.
The TTL logic compatible inputs can support 3.3V
and 5V logic levels regardless of the VCC voltage.
The proprietary bootstrap voltage clamping technique
ensures the gate voltages of the enhancement mode
GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN
FETs by offering a more user-friendly interface. It
is an ideal solution for applications requiring highfrequency,
high-efficiency operation in a small form
factor.