DESCRIPTION
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s super junction MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies, Lighting, Adapters, etc.

FEATURES
 7A,650V, RDS(on)(typ.)=0.55@VGS=10V
 New revolutionary high voltage technology
 Ultra low gate charge
 Enhanced avalanche capability
 Extreme dv/dt rated
 High peak current capability