Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
California Eastern Labs |
NE5511279A-A
|
297Kb / 4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5511279A-T1
|
99Kb / 3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
Renesas Technology Corp |
NE5531079A
|
240Kb / 11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5531079A
|
382Kb / 8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Mitsubishi Electric Sem... |
2SK2975
|
29Kb / 3P |
RF POWER MOS FET(VHF/UHF power amplifiers)
|
2SK2974
|
29Kb / 3P |
RF POWER MOS FET(VHF/UHF power amplifiers)
|
Hitachi Semiconductor |
PF0341A
|
47Kb / 12P |
MOS FET Power Amplifier Module for UHF Band
|
NEC |
NE552R679A
|
68Kb / 9P |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
|
Sanyo Semicon Device |
2SK1739A
|
123Kb / 4P |
RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Hitachi Semiconductor |
2SK3390
|
78Kb / 7P |
Silicon N Channel MOS FET UHF Power Amplifier
|