The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable applications.

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY

■ 32M density with 16Bit I/O Interface

■ High Performance Reads

   • 60/25ns 8-Word Page Mode

■ Configurative 4-Plane Dual Work

   • Flexible Partitioning

   • Read operations during Block Erase or (Page Buffer) Program

   • Status Register for Each Partition

■ Low Power Operation

   • 2.7V Read and Write Operations

   • Automatic Power Savings Mode Reduces ICCR in Static Mode

■ Enhanced Code + Data Storage

   • 5µs Typical Erase/Program Suspends

■ OTP (One Time Program) Block

   • 4-Word Factory-Programmed Area

   • 4-Word User-Programmable Area

■ High Performance Program with Page Buffer

   • 16-Word Page Buffer

   • 5µs/Word (Typ.) at 12V WP#/ACC

■ Operating Temperature 0°C to +70°C

■ CMOS Process (P-type silicon substrate)

■ Flexible Blocking Architecture

   • Eight 4K-word Parameter Blocks

   • Sixty-three 32K-word Main Blocks

   • Bottom Parameter Location

■ Enhanced Data Protection Features

   • Individual Block Lock and Block Lock-Down with Zero-Latency

   • All blocks are locked at power-up or device reset.

   • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions

Automated Erase/Program Algorithms

   • 3.0V Low-Power 11µs/Word (Typ.)

      Programming

   • 12V No Glue Logic 9µs/Word (Typ.)

      Production Programming and 0.5s Erase (Typ.)

■ Cross-Compatible Command Support

   • Basic Command Set

   • Common Flash Interface (CFI)

■ Extended Cycling Capability

   • Minimum 100,000 Block Erase Cycles

■ 48-Lead TSOP

■ ETOXTM* Flash Technology

■ Not designed or rated as radiation hardened