General Description
These dual N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to minimize
on-state resistance, provide rugged and reliable
performance and fast switching. These devices is
particularly suited for low voltage applications requiring a
low current high side switch.

Features
0.51A, 50V, RDS(ON) = 2W @ VGS=10V
High density cell design for low RDS(ON).
Proprietary SOT23-6 package design using copper lead
frame for superior thermal and electrical capabilities.
High saturation current.