Features
 InGaP HBT technology
 -47 dBc ACPR @ ±10 MHz, +24.5 dBm
 29 dB gain
 High efficiency
 Low transistor junction temperature
 Matched for a 50 Ω system
 Low profile miniature surface-mount package; RoHS compliant
 Multi-carrier capability
 Surface-mount (14-pin, 7  7  1.3 mm) package
(MSL3, 260 C per JEDEC J-STD-020)