1.1 General description
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Suitable for high frequency
applications due to fast switching
characteristics
 Suitable for logic level gate drive
sources
 Suitable for low gate drive sources
1.3 Applications
 DC-to-DC converters
 Logic level translators
 Motor and relay drivers