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SE3470 Datasheet (PDF) - Honeywell Solid State Electronics Center

SE3470 Datasheet PDF - Honeywell Solid State Electronics Center
No. de pieza SE3470
Descarga  SE3470 Descarga

Tamaño del archivo   354.26 Kbytes
Page   4 Pages
Fabricante Electrónico  HONEYWELL [Honeywell Solid State Electronics Center]
Página de inicio  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Descripción Electrónicos AlGaAs Infrared Emitting Diode

SE3470 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
SE3470 Datasheet PDF - Honeywell Solid State Electronics Center

No. de pieza SE3470
Descarga  SE3470 Click to download

Tamaño del archivo   354.26 Kbytes
Page   4 Pages
Fabricante Electrónico  HONEYWELL [Honeywell Solid State Electronics Center]
Página de inicio  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Descripción Electrónicos AlGaAs Infrared Emitting Diode

SE3470 Datasheet (HTML) - Honeywell Solid State Electronics Center

SE3470 Datasheet HTML 1Page - Honeywell Solid State Electronics Center SE3470 Datasheet HTML 2Page - Honeywell Solid State Electronics Center SE3470 Datasheet HTML 3Page - Honeywell Solid State Electronics Center SE3470 Datasheet HTML 4Page - Honeywell Solid State Electronics Center

SE3470 Detalles de producto

DESCRIPTION
The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.

FEATURES
• TO-46 metal can package
• Choice of flat window or lensed package
• 90¡ or 20¡ (nominal) beam angle option
• 880 nm wavelength
• Higher output power than GaAs at equivalent
   drive currents
•· Wide operating temperature range
   (-55°C to +125°C)
• Ideal for high pulsed current applications
   Mechanically and spectrally matched to
   SD3421/5421 photodiode,
   SD3443/5443/5491phototransistor,
   SD3410/5410 photodarlington and SD5600
   series Schmitt trigger




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Acerca de Honeywell Solid State Electronics Center


Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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