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74HC2G00DP-Q100 Datasheet (PDF) - Nexperia B.V. All rights reserved

74HC2G00DP-Q100 Datasheet PDF - Nexperia B.V. All rights reserved
No. de pieza 74HC2G00DP-Q100
Descarga  74HC2G00DP-Q100 Descarga
Tamaño del archivo   207.74 Kbytes
Page   11 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos Dual 2-input NAND gate

74HC2G00DP-Q100 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
74HC2G00DP-Q100 Datasheet PDF - Nexperia B.V. All rights reserved

No. de pieza 74HC2G00DP-Q100
Descarga  74HC2G00DP-Q100 Click to download

Tamaño del archivo   207.74 Kbytes
Page   11 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos Dual 2-input NAND gate

74HC2G00DP-Q100 Datasheet (HTML) - Nexperia B.V. All rights reserved


74HC2G00DP-Q100 Detalles de producto

1. General description
The 74HC2G00-Q100; 74HCT2G00-Q100 is a dual 2-input NAND gate. Inputs include clamp
diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of
VCC.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100
(Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C
• Wide supply voltage range from 2.0 V to 6.0 V
• Input levels:
• For 74HC2G00-Q100: CMOS level
• For 74HCT2G00-Q100: TTL level
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• ESD protection:
• MIL-STD-883, method 3015 exceeds 2000 V
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-A exceeds 200 V (C = 200 pF; R = 0 Ω)




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