PTVA104501EH-V1-R250 Datasheet(PDF) - WOLFSPEED, INC.

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PTVA104501EH-V1-R250 Datasheet (PDF) - WOLFSPEED, INC.

PTVA104501EH-V1-R250 Datasheet PDF - WOLFSPEED, INC.


No. de pieza	PTVA104501EH-V1-R250

Descarga	PTVA104501EH-V1-R250 Descarga

Tamaño del archivo	540.34 Kbytes

Page	10 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos

Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz

PTVA104501EH-V1-R250 Datasheet (PDF)

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PTVA104501EH-V1-R250 Datasheet PDF - WOLFSPEED, INC.


No. de pieza	PTVA104501EH-V1-R250

Descarga	PTVA104501EH-V1-R250 Click to download

Tamaño del archivo	540.34 Kbytes

Page	10 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz

PTVA104501EH-V1-R250 Datasheet (HTML) - WOLFSPEED, INC.

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PTVA104501EH-V1-R250 Datasheet HTML 9Page - WOLFSPEED, INC.

PTVA104501EH-V1-R250 Datasheet HTML 10Page - WOLFSPEED, INC.

PTVA104501EH-V1-R250 Detalles de producto

Description
The PTVA104501EH LDMOS FET is designed for use in power amplifier
applications in the 960 to 1215 MHz frequency band. Features include
high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability
Features
• Broadband internal input and output matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.

Número de pieza similar - PTVA104501EH-V1-R250

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTVA104501EH	189Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02, 2014-07-22
Infineon Technologies A...	PTVA104501EH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19
Cree, Inc	PTVA104501EH	430Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz
Infineon Technologies A...	PTVA104501EHV1R0	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19
Infineon Technologies A...	PTVA104501EHV1R0XTMA1	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19

Descripción similar - PTVA104501EH-V1-R250

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTVA104501EH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19
	PTVA093002TC	210Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 ??960 MHz Rev. 04, 2014-06-16
	PTVA035002EV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz Rev. 05.2, 2016-06-08
	PTVA030121EA	874Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz Rev. 05.1, 2016-04-19
	PTVA102001EA	241Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz Rev. 03, 2017-08-17
Cree, Inc	PTVA030121EA	423Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz
	PTVA035002EV	462Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz
	PTVA102001EA	451Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz
	PTVA104501EH	430Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz
WOLFSPEED, INC.	PTVA102001EA	540Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Rev. 05, 2023-07-10

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