Description
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency,
and a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Asymmetrical Doherty design
- Main: P3dB = 220 W Typ
- Peak: P3dB = 300 W Typ
• Typical Pulsed CW performance, 3700 MHz, 48 V,
Doherty @ P3dB, 10 µs, 10% duty cycle
- Output power = 450 W
- Drain efficiency = 60%
- Gain = 11.5 dB
• Capable of handling 10:1 VSWR @ 48 V, 63 W
(WCDMA) output power
• Human Body Model Class 1A, (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant