GTVA261701FA-V1-R2 Datasheet(PDF) - WOLFSPEED, INC.

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GTVA261701FA-V1-R2 Datasheet (PDF) - WOLFSPEED, INC.

GTVA261701FA-V1-R2 Datasheet PDF - WOLFSPEED, INC.


No. de pieza	GTVA261701FA-V1-R2

Descarga	GTVA261701FA-V1-R2 Descarga

Tamaño del archivo	750.06 Kbytes

Page	10 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

GTVA261701FA-V1-R2 Datasheet (PDF)

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GTVA261701FA-V1-R2 Datasheet PDF - WOLFSPEED, INC.


No. de pieza	GTVA261701FA-V1-R2

Descarga	GTVA261701FA-V1-R2 Click to download

Tamaño del archivo	750.06 Kbytes

Page	10 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

GTVA261701FA-V1-R2 Datasheet (HTML) - WOLFSPEED, INC.

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GTVA261701FA-V1-R2 Datasheet HTML 10Page - WOLFSPEED, INC.

GTVA261701FA-V1-R2 Detalles de producto

Description
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input Matched
• Typical CW performance, 2690 MHz, 48 V, single side
- Output power at P3dB = 170 W
- Efficiency = 75%
- Gain = 15 dB
• Human Body Model, Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 40 W (CW)
output power
• RoHS-compliant

Número de pieza similar - GTVA261701FA-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	GTVA261701FA	858Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
Infineon Technologies A...	GTVA261701FA	858Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29

Descripción similar - GTVA261701FA-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

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