GTRA362002FC Datasheet(PDF) - WOLFSPEED, INC.

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GTRA362002FC Datasheet (PDF) - WOLFSPEED, INC.

GTRA362002FC Datasheet PDF - WOLFSPEED, INC.


No. de pieza	GTRA362002FC

Descarga	GTRA362002FC Descarga

Tamaño del archivo	435.98 Kbytes

Page	8 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

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Descripción Electrónicos

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

GTRA362002FC Datasheet (PDF)

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GTRA362002FC Datasheet PDF - WOLFSPEED, INC.


No. de pieza	GTRA362002FC

Descarga	GTRA362002FC Click to download

Tamaño del archivo	435.98 Kbytes

Page	8 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

GTRA362002FC Datasheet (HTML) - WOLFSPEED, INC.

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GTRA362002FC Detalles de producto

Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Asymmetrical Doherty design
- Main: P3dB = 85 W Typ
- Peak: P3dB = 115 W Typ
• Typical Pulsed CW performance, 3500 MHz, 48 V,
combined outputs
- Output power at P3dB = 200 W
- Efficiency = 60%
- Gain = 12.5 dB
• Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA)
output power
• Human Body Model Class 1A, (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Número de pieza similar - GTRA362002FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz

Descripción similar - GTRA362002FC

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27

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