Description
Wolfspeed’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to Si and GaAs transistors. This MMIC enables extremely wide
bandwidths to be achieved in a small footprint screw-down package.
Features
• 17 dB Small Signal Gain
• 25 W Typical PSAT
• Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” total product size
Applications
• Ultra Broadband Amplifiers
• Test Instrumentation
• EMC Amplifier Drivers