CGHV35120F Datasheet(PDF) - WOLFSPEED, INC.

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CGHV35120F Datasheet (PDF) - WOLFSPEED, INC.

CGHV35120F Datasheet PDF - WOLFSPEED, INC.


No. de pieza	CGHV35120F

Descarga	CGHV35120F Descarga

Tamaño del archivo	837.74 Kbytes

Page	12 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos

120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems

CGHV35120F Datasheet (PDF)

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CGHV35120F Datasheet PDF - WOLFSPEED, INC.


No. de pieza	CGHV35120F

Descarga	CGHV35120F Click to download

Tamaño del archivo	837.74 Kbytes

Page	12 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos	120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems

CGHV35120F Datasheet (HTML) - WOLFSPEED, INC.

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CGHV35120F Detalles de producto

Description
Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron
mobility transistor (HEMT)designed specifically with high efficiency,
high gain and wide bandwidth capabilities, which makes the
CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Features
• Rated Power = 120 W @ TCASE = 85°C
• Operating Frequency = 2.9 - 3.8 GHz
• Transient 100 μsec - 300 μsec @ 20% Duty Cycle
• 13 dB Power Gain @ TCASE = 85°C
Large Signal Models Available for ADS and MWO
• 62% Typical Drain Efficiency @ TCASE = 85°C
• Input Matched
• <0.3 dB Pulsed Amplitude Droop

Número de pieza similar - CGHV35120F

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	CGHV35150	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev 1.0
WOLFSPEED, INC.	CGHV35150	1Mb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev.1.4, 2022-12-2
Cree, Inc	CGHV35150-TB	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev 1.0
	CGHV35150F	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev 1.0
	CGHV35150F-AMP	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev 1.0

Descripción similar - CGHV35120F

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	CGHV35150	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev 1.0
Cree, Inc	CGHV14800	765Kb / 9P	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Rev 0.2
WOLFSPEED, INC.	CGH31240F	2Mb / 12P	240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev. 2.2, 2022-11-11
	CGH35240	1Mb / 12P	240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev. 4.0, 2022-6-28
	CGHV14250	1Mb / 12P	250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Rev. 3.0, 2022-9-30
	CGHV31500F	808Kb / 11P	500 W, 2.7 - 3.1 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev 3.2 - April 2020
	CGHV35150	1Mb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev.1.4, 2022-12-2
	CGHV35400F	928Kb / 11P	400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev 5.2 - February 2021
	CGHV35400F1	1Mb / 21P	400 W, 2.9 - 3.5 GHz, GaN HEMT Rev. 1.0, 2022-8-4
	CGHV59350	3Mb / 14P	350 W, 5.2 - 5.9 GHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Rev. 1.6, 2023-05-24

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