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74LVC2G00GT Datasheet (PDF) - Nexperia B.V. All rights reserved

74LVC2G00GT Datasheet PDF - Nexperia B.V. All rights reserved
No. de pieza 74LVC2G00GT
Descarga  74LVC2G00GT Descarga
Tamaño del archivo   302.44 Kbytes
Page   20 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos Dual 2-input NAND gate

74LVC2G00GT Datasheet (PDF)

Go To PDF Page Descarga Datasheet
74LVC2G00GT Datasheet PDF - Nexperia B.V. All rights reserved

No. de pieza 74LVC2G00GT
Descarga  74LVC2G00GT Click to download

Tamaño del archivo   302.44 Kbytes
Page   20 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos Dual 2-input NAND gate

74LVC2G00GT Datasheet (HTML) - Nexperia B.V. All rights reserved


74LVC2G00GT Detalles de producto

1. General description
The 74LVC2G00 is a dual 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V
devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V
environments.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry
disables the output, preventing the potentially damaging backflow current through the device when
it is powered down.
2. Features and benefits
• Wide supply voltage range from 1.65 V to 5.5 V
• 5 V tolerant outputs for interfacing with 5 V logic
• High noise immunity
• ±24 mA output drive (VCC = 3.0 V)
• CMOS low power dissipation
• IOFF circuitry provides partial Power-down mode operation
• Complies with JEDEC standard:
• JESD8-7 (1.65 V to 1.95 V)
• JESD8-5 (2.3 V to 2.7 V)
• JESD8-B/JESD36 (2.7 V to 3.6 V)
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Overvoltage tolerant inputs to 5.5 V
• ESD protection:
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-A exceeds 200 V
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C




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