P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING

DESCRIPTION
The μ PA507TE is a switching device, which can be driven directly
by a 1.8 V power source.
This device incorporates a MOS FET, which features a low on-state
resistance and excellent switching characteristics and a low forward
voltage Schottky barrier diode, and is suitable for applications such
as DC/DC converter of portable machine and so on.
FEATURES
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)
• Low forward voltage (Schottky barrier diode)
VF = 0.35 V TYP. (IF = 1.0 A)