| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
VIGO Photonics S.A. |
PVI4TE6TO8-36-DTE
|
722Kb / 2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PVI-2TE-6-1
|
723Kb / 2P |
PVI-2TE-6-1×1-TO8-wZnSeAR-36 3.0 – 6.7 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
LABM-I-4
|
760Kb / 2P |
2.4 – 4.3 μm and over 5 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
01/10/2021 |
|
LABM-I-5
|
762Kb / 2P |
2.9 – 5.5 μm and over 15 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
01/10/2021 |
|
LABM-I-6
|
813Kb / 2P |
3.0 – 7.5 μm and over 200 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
24/02/2021 |
|
QM-10.6
|
880Kb / 2P |
3.0 – 12.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry multiple junction detector
16/08/2021 |
|
QM-5
|
783Kb / 2P |
3.5 – 6.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry detector
16/08/2021 |
|
UHSM-I-10.6
|
825Kb / 2P |
3.0 – 12.0 μm and over 700 MHz HgCdTe ultra high speed IR detection module with optically immersed photovoltaic detector
09/11/2020 |
|
UM-10.6
|
803Kb / 2P |
2.0 – 12.0 μm and DC – 70 MHz HgCdTe universal IR detection module with photovoltaic multiple junction detector
09/11/2020 |
|
UM-I-10.6
|
823Kb / 2P |
2.0 – 12.0 μm and DC – 100 MHz HgCdTe universal IR detection module with optically immersed photovoltaic multiple junction detector
09/11/2020 |
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