Features
• Electrically screened to DLA SMD# 5962-95812
• No latch-up, dielectrically isolated device islands
• Pin and functionally compatible with Renesas
HS-302RH series analog switches
• Analog signal range equal to the supply voltage
range
• Low leakage: 150nA (maximum, post-rad)
• Low rON: 60Ω (maximum, post-rad)
• Low standby supply current: ±150μA (maximum,
post-rad)
• Radiation assurance (Note 1)
○ High dose rate (50 to 300rad(Si)/s): 100krad(Si)
○ Low dose rate (0.01rad(Si)/s): 50krad(Si)
• Single event effects
○ SEE for LET = 60MeV·cm2/mg at 60° incident
angle, <150pC charge transferred to the output of
an off switch (based on SOI design calculations)