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VBA1310S Datasheet (PDF) - VBsemi Electronics Co.,Ltd
VBA1310S Datasheet PDF - VBsemi Electronics Co.,Ltd
No. de pieza VBA1310S_V01
Descarga  VBA1310S Descarga
Tamaño del archivo   636.0 Kbytes
Page   7 Pages
Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd
Descripción Electrónicos N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

VBA1310S Datasheet (PDF)

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VBA1310S Datasheet PDF - VBsemi Electronics Co.,Ltd

No. de pieza VBA1310S_V01
Descarga  VBA1310S Click to download

Tamaño del archivo   636.0 Kbytes
Page   7 Pages
Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd
Descripción Electrónicos N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

VBA1310S Datasheet (HTML) - VBsemi Electronics Co.,Ltd


VBA1310S Detalles de producto

General Description
The VBA1310S uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further.

Features
VDS (V) = 30V
ID = 12 A (VGS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A




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