Features
• Electrically screened to DLA SMD# 5962-14226
• Low input offset voltage. . . . . . . . . . . . . . ±110μV, maximum
• Superb offset temperature coefficient. . .1μV/°C, maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum
• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440μA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SET recovery time . . . . . . . . . . . ≤10μs at 60MeV•cm2/m
- SEL immune (SOI process)
- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . .100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.