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PBSS5130PAP Datasheet (PDF) - Nexperia B.V. All rights reserved

PBSS5130PAP Datasheet PDF - Nexperia B.V. All rights reserved
No. de pieza PBSS5130PAP
Descarga  PBSS5130PAP Descarga
Tamaño del archivo   750.45 Kbytes
Page   17 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PBSS5130PAP Datasheet (PDF)

Go To PDF Page Descarga Datasheet
PBSS5130PAP Datasheet PDF - Nexperia B.V. All rights reserved

No. de pieza PBSS5130PAP
Descarga  PBSS5130PAP Click to download

Tamaño del archivo   750.45 Kbytes
Page   17 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PBSS5130PAP Datasheet (HTML) - Nexperia B.V. All rights reserved


PBSS5130PAP Detalles de producto

1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN.

2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified

3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)




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Descripción similar - PBSS5130PAP

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