Description
Avalanche breakdown diodes fabricated in a proprietary
silicon avalanche technology protect each I/O pin to provide
a high level of protection for electronic equipment that
may experience destructive electrostatic discharges (ESD).
These robust diodes can safely absorb repetitive ESD
strikes at ±30kV (contact and air discharge, IEC 61000-
4-2) without performance degradation. Additionally, each
diode can safely dissipate 80A (SP1105S) of 8/20μs surge
current (IEC 61000-4-5 2nd edition) with very low clamping
voltages.

Features
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Lightning, IEC 61000-
4-5 2nd edition, 80A
(tP=8/20μs, SP1105S)
• Low clamping voltage
• Low leakage current
• Moisture Sensitivity
Level(MSL -1)
• Lead free and RoHS
compliant
• AEC-Q101 qualified

Applications
• Switches / Buttons
• Test Equipment /
Instrumentation
• Point-of-Sale Terminals
• Medical Equipment
• Notebooks / Desktops /
Servers
• Computer Peripherals
• Automotive Electronics