1 Description
Features
 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 22 mA2)
 Optimized for high temperature operation
Benefits
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability due to lower operating temperatures
 Reduced EMI
Applications
 Switch mode power supply
 Power factor correction
 Solar inverter
 Uninterruptible power supply
ThinQ!™ Generation 5 represents Infineon leading edge technology for the
SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer
technology, the new family of products shows improved efficiency over
all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.