DESCRIPTION
The SFH640 has a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a plastic DIP-6 package.
It features a high current transfer ratio, low coupling
capacitance, and high isolation voltage.
The coupling device is designed for signal transmission
between two electrically separated circuits.

FEATURES
Phototransistor optocoupler in a 6 pin DIP
package with base connection
Very high collector emitter breakdown voltage,
BVCEO = 300 V
Isolation rated voltage: 5000 VRMS
Low coupling capacitance
High common m;ode transient immunity
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912

APPLICATIONS
Telecom
Industrial controls
Battery powered equipment
Office machines
Programmable controllers

AGENCY APPROVALS
UL
cUL
DIN EN 60747-5-5 (VDE 0884-5) available with option 1
CQC GB4943.1-2011
CQC GB8898-2011