| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 IP SEMICONDUCTOR CO., L... |
IPT04Q08-TED
|
228Kb / 5P |
High current density due to double mesa technology
|
|
IPT08Q08-CEA
|
214Kb / 4P |
High current density due to double mesa technology
|
|
IPT08Q08-CED
|
215Kb / 5P |
High current density due to double mesa technology
|
|
IPT12Q08-CEF
|
235Kb / 4P |
High current density due to double mesa technology
|
|
IPT20Q06-TEA
|
208Kb / 4P |
High current density due to double mesa technology
|
|
IPT20Q08-TEA
|
208Kb / 4P |
High current density due to double mesa technology
|
 AVX Corporation |
HL02150GTTR
|
303Kb / 4P |
High Withstanding Voltage
|
 Murata Manufacturing Co... |
TZW4Z010A001B00
|
265Kb / 3P |
To meet high power application due to withstanding voltage 550Vdc.
Last updated06/21/2022 |
|
TZW4Z010A001R00
|
265Kb / 3P |
To meet high power application due to withstanding voltage 550Vdc.
Last updated06/21/2022 |
|
TZW4Z1R5A001R00
|
265Kb / 3P |
To meet high power application due to withstanding voltage 550Vdc.
Last updated06/21/2022 |