General features
■ LOWER ON-VOLTAGE DROP (Vcesat)
■ LOWER CRES / CIES RATIO (NO
CROSS-CONDUCTION SUSCEPTIBILITY)
■ VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE

Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix "H" identifies a family
optimized for high frequency applications in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.

Applications
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS