Features
■ High forward transfer admittance: P Channel |Yfs| = S (typ.) N Channel |Yfs| = S (typ.)
■ Low leakage current: P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V)
■ Enhancement-mode : P Channel Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Rating Characteristics