Description
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Product status link STPSC10H12G2-TR Product summary IF(AV) 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V 1200 V, 10 A, silicon carbide power Schottky diode STPSC10H12G2-TR Datasheet DS13404 - Rev 1 - August 2020 For further information contact your local STMicroelectronics sales office.

Features
■ No or negligible reverse recovery
■ Switching behavior independent of temperature
■ Robust high voltage periphery
■ Operating Tj from -40 °C to 175 °C
■ Low VF
■ D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
■ ECOPACK2 compliant

Applications
■ On board charger (OBC)
■ DC/DC
■ PFC