PXFE181507FC-V1-R2 Datasheet(PDF) - Cree, Inc

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PXFE181507FC-V1-R2 Datasheet (PDF) - Cree, Inc

PXFE181507FC-V1-R2 Datasheet PDF - Cree, Inc


No. de pieza	PXFE181507FC-V1-R2

Descarga	PXFE181507FC-V1-R2 Descarga

Tamaño del archivo	550.25 Kbytes

Page	8 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

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Descripción Electrónicos

Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

PXFE181507FC-V1-R2 Datasheet (PDF)

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PXFE181507FC-V1-R2 Datasheet PDF - Cree, Inc


No. de pieza	PXFE181507FC-V1-R2

Descarga	PXFE181507FC-V1-R2 Click to download

Tamaño del archivo	550.25 Kbytes

Page	8 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

PXFE181507FC-V1-R2 Datasheet (HTML) - Cree, Inc

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PXFE181507FC-V1-R2 Datasheet HTML 6Page - Cree, Inc

PXFE181507FC-V1-R2 Datasheet HTML 7Page - Cree, Inc

PXFE181507FC-V1-R2 Datasheet HTML 8Page - Cree, Inc

Número de pieza similar - PXFE181507FC-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
WOLFSPEED, INC.	PXFE181507FC-V1-R2	695Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28

Descripción similar - PXFE181507FC-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXFC193808SV	196Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13
	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAE183708NB	486Kb / 6P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PXAC182908FV	515Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
	PXAD184218FV	465Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
	PTFB181702FC	554Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz
WOLFSPEED, INC.	PXFE181507FC	695Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28

Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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